Semiconductor apparatus and manufacturing method

ABSTRACT

A semiconductor apparatus and its manufacturing method are presented. The method entails providing a substrate structure comprising a substrate, one or more fins positioned along a first direction on the substrate, and a separation region surrounding the fins. The separation region comprises a first separation region neighboring a first side of the fins and a second separation region neighboring a second side of the fins; forming a first and a second insulation layers on the substrate structure; forming a barrier layer; performing a first etching process using the barrier layer as a mask; removing the barrier layer; performing a second etching process using the remaining second insulation layer as a mask; forming a third insulation layer on side surfaces of the remaining first and second insulation layers; and performing a third etching process using the remaining second insulation layer and the third insulation layer as a mask.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and benefit of Chinese PatentApplication No. 201610900638.X filed on Oct. 17, 2016, which isincorporated herein by reference in its entirety.

BACKGROUND (a) Field of the Invention

This inventive concept relates to semiconductor technologies, morespecifically, a semiconductor apparatus and its manufacturing method.

(b) Description of the Related Art

In Fin Field Effect Transistor (FinFET), dummy gate structures areformed on Shallow Trench Isolation (STI) to control Critical Dimension(CD) uniformity. To improve the quality of FinFET, the upper portion ofthe fins neighboring the dummy gate structures are etched to form dents,in which semiconductor materials may be epitaxially grown to inducestress to a channel.

However, since the STI regions are typically lower than the fins, thebottom portions of the dummy gate structures on STI are also lower thanthe fins. The position shift of the dummy gate structures due to thedeviations in the manufacturing process may cause the fins to bridgewith the dummy gate structures to cause electrical leakage anddeteriorate the performance of the semiconductor devices. Additionally,the position shift of the dummy gate structures may distort the contourof the epitaxially grown semiconductor materials and affect the inducedstress in the channel, which may lower the migration rate of chargecarriers in the semiconductor devices and adversely affect itsperformance.

Therefore a semiconductor manufacturing method that can reduce oreliminate bridge between the components and improve reliability andmigration rate of charge carriers in the device is desirable.

SUMMARY

This summary is related to some of many embodiments of the inventiveconcept disclosed herein and is not intended to limit the scope of thisinventive concept.

A method for manufacturing a semiconductor apparatus, comprising:

providing a substrate structure, wherein the substrate structurecomprises:

-   -   a substrate;    -   one or multiple fins positioned along a first direction on the        substrate; and    -   a separation region surrounding the fins,    -   wherein an upper surface of the separation region is on a        substantially same horizontal level as an upper surface of the        fins, the separation region comprises a first separation region        neighboring a first side of the fins along the first direction,        and a second separation region neighboring a second side of the        fins along a second direction that is different from the first        direction;

forming a first insulation layer on the substrate structure;

forming a second insulation layer on the first insulation layer;

forming a barrier layer on a first portion of the second insulationlayer on the first separating region;

performing a first etching process using the barrier layer as a mask toremove a second portion of the second insulation layer that is notcovered by the barrier layer;

removing the barrier layer;

performing a second etching process using the remaining secondinsulation layer as a mask to remove a portion of the first insulationlayer that is not covered by the remaining second insulation layer;

forming a third insulation layer on side surfaces of the remaining firstinsulation layer and the remaining second insulation layer;

performing a third etching process using the remaining second insulationlayer and the third insulation layer as a mask to remove a portion ofthe second separation region that is not covered by the remaining secondinsulation layer or the third insulation layer; and

removing the remaining second insulation layer and the third insulationlayer.

Additionally, in the aforementioned method, the barrier layer may covera portion of the second insulation layer on the upper surface of thefins neighboring the first separation region.

Additionally, in the aforementioned method, forming a third insulationlayer on side surfaces of the remaining first insulation layer and theremaining second insulation layer may include:

forming an insulation material layer to cover a surface that is notcovered by either the remaining first insulation layer or the remainingsecond insulation layer, side surfaces of the remaining first insulationlayer and the remaining second insulation layer, and an upper surface ofthe remaining second insulation layer; and

removing a portion of the insulation material layer on the surface thatis not covered by the remaining first insulation layer and the remainingsecond insulation layer, and on the upper surface of the remainingsecond insulation layer, the remaining insulation material layer is thethird insulation layer.

Additionally, in the aforementioned method, the first insulation layerand the second insulation layer may have different etching ratios.

Additionally, in the aforementioned method, the first insulation layeris an oxide layer, the second and third insulation layers may be anitride layer.

Additionally, in the aforementioned method, providing a substratestructure may include:

providing an initial substrate;

forming a patterned hard mask layer on the initial substrate;

etching the initial substrate using the hard mask layer as a mask toform the substrate and one or multiple fins on the substrate;

depositing separation material to fill areas surrounding the fins,wherein an upper surface of the separation material is on asubstantially same horizontal level with an upper surface of the hardmask layer;

etching back the separation material to expose the hard mask layer; and

removing the hard mask layer to form the substrate structure.

Additionally, in the aforementioned method, the initial substrate mayinclude an initial semiconductor layer and an initial oxide layer on theinitial semiconductor layer, and the fins may include a semiconductorlayer and an oxide layer on the semiconductor layer.

Additionally, the aforementioned method may further include:

forming a first gate structure on the fins; and

forming a second gate structure on the remaining first insulation layer.

Additionally, the aforementioned method further comprises:

etching the fins on two sides of the first gate structure using thefirst gate structure and the second gate structure as masks to formdents; and

epitaxially growing semiconductor materials in the dents to form asource region and a drain region.

Additionally, in the aforementioned method, the semiconductor materialscomprise silicon-germanium (SiGe) or silicon carbide (SiC).

Additionally, in the aforementioned method, the first gate structureincludes;

a first dielectric layer on the fins;

a first gate on the first dielectric layer;

a first hard mask layer on the first gate; and

first separation objects on side surfaces of the first dielectric layer,the first gate, and the first hard mask layer,

and the second gate structure includes:

a second dielectric layer on the remaining first insulation layer;

a second gate on the second dielectric layer;

a second hard mask layer on the second gate; and

second separation objects on side surfaces of the second dielectriclayer, the second gate, and the second hard mask layer, wherein thesecond separation objects cover a portion of the upper surfaces of thefins next to the first separation region that is underneath the secondgate structure.

Additionally, in the aforementioned method, the first dielectric layerand the second dielectric layer may be made of silicon oxide, the firstgate and the second gate are made of poly-crystalline silicon, and thefirst hard mask layer and the second hard mask layer are made of siliconnitride.

This inventive concept further presents a semiconductor apparatus,including:

a substrate;

one or multiple fins positioned along a first direction on thesubstrate;

a separation region surrounding the fins, wherein the separation regioncomprises a first separation region neighboring a first side of the finsalong the first direction, and a second separation region neighboring asecond side of the fins along a second direction that is different fromthe first direction, wherein an upper surface of the first separationregion is on a substantially same horizontal level with an upper surfaceof the fins, and wherein an upper surface of the second separationregion is lower than the upper surface of the fins; and

a first insulation layer on the first separation region.

Additionally, in the aforementioned apparatus, the first insulationlayer may further cover a portion of the upper surfaces of the fins nextto the first separation region.

Additionally, the aforementioned apparatus may further include:

a first gate structure on the fins; and

a second gate structure on the first insulation layer.

Additionally, the aforementioned apparatus may further include:

a source region next to a first side of the first gate structure formedby epitaxially growing a semiconductor material; and

a drain region next to a second side of the first gate structure formedby epitaxially growing the semiconductor material.

Additionally, in the aforementioned apparatus, the semiconductormaterials comprise silicon-germanium (SiGe) or silicon carbide (SiC).

Additionally, in the aforementioned apparatus, the first gate structuremay include:

a first dielectric layer on the fins;

a first gate on the first dielectric layer;

a first hard mask layer on the first gate; and

first separation objects on side surfaces of the first dielectric layer,the first gate, and the first hard mask layer,

and the second gate structure comprises:

a second dielectric layer on the remaining first insulation layer;

a second gate on the second dielectric layer;

a second hard mask layer on the second gate; and

second separation objects on side surfaces of the second dielectriclayer, the second gate, and the second hard mask layer, wherein thesecond separation objects cover a portion of the upper surface of thefins next to the first separation region that is underneath the secondgate structure.

Additionally, in the aforementioned apparatus, the first dielectriclayer and the second dielectric layer may be made of silicon oxide, thefirst gate and the second gate are made of poly-crystalline silicon, andthe first hard mask layer and the second hard mask layer are made ofsilicon nitride.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a flowchart illustrating the procedures in a manufacturingmethod of a semiconductor apparatus in accordance with one or moreembodiments of this inventive concept.

FIG. 2A shows a schematic cross-sectional view illustrating one stage ofa manufacturing method of a semiconductor apparatus in accordance withone or more embodiments of this inventive concept, viewed from a firstdirection.

FIG. 2B shows another schematic cross-sectional view of the componentshown in FIG. 2A, viewed from a second direction.

FIG. 3A shows a schematic cross-sectional view illustrating one stage ofa manufacturing method of a semiconductor apparatus in accordance withone or more embodiments of this inventive concept, viewed from the firstdirection.

FIG. 3B shows another schematic cross-sectional view of the componentshown in FIG. 3A, viewed from the second direction.

FIGS. 4 and 5A each show a schematic cross-sectional view illustratingone stage of a manufacturing method of a semiconductor apparatus inaccordance with one or more embodiments of this inventive concept,viewed from the first direction.

FIG. 5B shows another schematic cross-sectional view of the componentshown in FIG. 5A, viewed from the second direction.

FIGS. 6 and 7A each show a schematic cross-sectional view illustratingone stage of a manufacturing method of a semiconductor apparatus inaccordance with one or more embodiments of this inventive concept,viewed from the first direction.

FIG. 7B shows another schematic cross-sectional view of the componentshown in FIG. 7A, viewed from the second direction.

FIG. 8A shows a schematic cross-sectional view illustrating one stage ofa manufacturing method of a semiconductor apparatus in accordance withone or more embodiments of this inventive concept, viewed from the firstdirection.

FIG. 8B shows another schematic cross-sectional view of the componentshown in FIG. 8A, viewed from the second direction.

FIG. 9A shows a schematic cross-sectional view illustrating one stage ofa manufacturing method of a semiconductor apparatus in accordance withone or more embodiments of this inventive concept, viewed from the firstdirection.

FIG. 9B shows another schematic cross-sectional view of the componentshown in FIG. 9A, viewed from the second direction.

FIG. 10A shows a schematic cross-sectional view illustrating one stageof a manufacturing method of a semiconductor apparatus in accordancewith one or more embodiments of this inventive concept, viewed from thefirst direction.

FIG. 10B shows another schematic cross-sectional view of the componentshown in FIG. 10A, viewed from the second direction.

FIG. 11A shows a schematic cross-sectional view illustrating one stageof a manufacturing method of a semiconductor apparatus in accordancewith one or more embodiments of this inventive concept, viewed from thefirst direction.

FIG. 11B shows another schematic cross-sectional view of the componentshown in FIG. 11A, viewed from the second direction.

FIGS. 12, 13, 14, and 15A each show a schematic cross-sectional viewillustrating one stage of a manufacturing method of a semiconductorapparatus in accordance with one or more embodiments of this inventiveconcept, viewed from the first direction.

FIG. 15B shows another schematic cross-sectional view of the componentshown in FIG. 15A, viewed from the second direction.

FIG. 16A shows a schematic cross-sectional view illustrating one stageof a manufacturing method of a semiconductor apparatus in accordancewith one or more embodiments of this inventive concept, viewed from thefirst direction.

FIG. 16B shows another schematic cross-sectional view of the componentshown in FIG. 16A, viewed from the second direction.

FIG. 17A shows a schematic cross-sectional view illustrating one stageof a manufacturing method of a semiconductor apparatus in accordancewith one or more embodiments of this inventive concept, viewed from thefirst direction.

FIG. 17B shows another schematic cross-sectional view of the componentshown in FIG. 17A, viewed from the second direction.

FIG. 18A shows a schematic cross-sectional view illustrating one stageof a manufacturing method of a semiconductor apparatus in accordancewith one or more embodiments of this inventive concept, viewed from thefirst direction.

FIG. 18B shows another schematic cross-sectional view of the componentshown in FIG. 18A, viewed from the second direction.

FIG. 19A shows a schematic cross-sectional view illustrating one stageof a manufacturing method of a semiconductor apparatus in accordancewith one or more embodiments of this inventive concept, viewed from thefirst direction.

FIG. 19B shows another schematic cross-sectional view of the componentshown in FIG. 19A, viewed from the second direction.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Example embodiments of the inventive concept are described withreference to the accompanying drawings. As those skilled in the artwould realize, the described embodiments may be modified in various wayswithout departing from the spirit or scope of the inventive concept.Embodiments may be practiced without some or all of these specifieddetails. Well known process steps and/or structures may not be describedin detail, in the interest of clarity.

The drawings and descriptions are illustrative and not restrictive. Likereference numerals may designate like (e.g., analogous or identical)elements in the specification. To the extent possible, any repetitivedescription will be minimized.

Relative sizes and thicknesses of elements shown in the drawings arechosen to facilitate description and understanding, without limiting theinventive concept. In the drawings, the thicknesses of some layers,films, panels, regions, etc., may be exaggerated for clarity.

Embodiments in the figures may represent idealized illustrations.Variations from the shapes illustrated may be possible, for example dueto manufacturing techniques and/or tolerances. Thus, the exampleembodiments shall not be construed as limited to the shapes or regionsillustrated herein but are to include deviations in the shapes. Forexample, an etched region illustrated as a rectangle may have rounded orcurved features. The shapes and regions illustrated in the figures areillustrative and shall not limit the scope of the embodiments.

Although the terms “first,” “second,” etc. may be used herein todescribe various elements, these elements shall not be limited by theseterms. These terms may be used to distinguish one element from anotherelement. Thus, a first element discussed below may be termed a secondelement without departing from the teachings of the present inventiveconcept. The description of an element as a “first” element may notrequire or imply the presence of a second element or other elements. Theterms “first,” “second,” etc. may also be used herein to differentiatedifferent categories or sets of elements. For conciseness, the terms“first,” “second,” etc. may represent “first-category (or first-set),”“second-category (or second-set),” etc., respectively.

If a first element (such as a layer, film, region, or substrate) isreferred to as being “on,” “neighboring,” “connected to,” or “coupledwith” a second element, then the first element can be directly on,directly neighboring, directly connected to or directly coupled with thesecond element, or an intervening element may also be present betweenthe first element and the second element. If a first element is referredto as being “directly on,” “directly neighboring,” “directly connectedto,” or “directly coupled with” a second element, then no intendedintervening element (except environmental elements such as air) may alsobe present between the first element and the second element.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, may be used herein for ease of description todescribe one element or feature's spatial relationship to anotherelement(s) or feature(s) as illustrated in the figures. It will beunderstood that the spatially relative terms may encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device may be otherwise oriented (rotated 90degrees or at other orientation), and the spatially relative descriptorsused herein shall be interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to limit the inventive concept. As usedherein, singular forms, “a,” “an,” and “the” may indicate plural formsas well, unless the context clearly indicates otherwise. The terms“includes” and/or “including,” when used in this specification, mayspecify the presence of stated features, integers, steps, operations,elements, and/or components, but may not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups.

Unless otherwise defined, terms (including technical and scientificterms) used herein have the same meanings as what is commonly understoodby one of ordinary skill in the art related to this field. Terms, suchas those defined in commonly used dictionaries, shall be interpreted ashaving meanings that are consistent with their meanings in the contextof the relevant art and shall not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

The term “connect” may mean “electrically connect.” The term “insulate”may mean “electrically insulate.”

Unless explicitly described to the contrary, the word “comprise” andvariations such as “comprises,” “comprising,” “include,” or “including”may imply the inclusion of stated elements but not the exclusion ofother elements.

Various embodiments, including methods and techniques, are described inthis disclosure. Embodiments of the inventive concept may also cover anarticle of manufacture that includes a non-transitory computer readablemedium on which computer-readable instructions for carrying outembodiments of the inventive technique are stored. The computer readablemedium may include, for example, semiconductor, magnetic, opto-magnetic,optical, or other forms of computer readable medium for storing computerreadable code. Further, the inventive concept may also cover apparatusesfor practicing embodiments of the inventive concept. Such apparatus mayinclude circuits, dedicated and/or programmable, to carry out operationspertaining to embodiments of the inventive concept. Examples of suchapparatus include a general purpose computer and/or a dedicatedcomputing device when appropriately programmed and may include acombination of a computer/computing device and dedicated/programmablehardware circuits (such as electrical, mechanical, and/or opticalcircuits) adapted for the various operations pertaining to embodimentsof the inventive concept.

FIG. 1 shows a flowchart illustrating simplified procedures in amanufacturing method of a semiconductor apparatus in accordance with oneor more embodiments of this inventive concept. FIGS. 2A, 2B, 3A, 3B, 4,5A, 5B, 6, 7A, 7B, 8A, 8B, 9A, 9B, 10A, 10B, 11A, and 11B show schematiccross-sectional views illustrating different stages of a manufacturingmethod of a semiconductor apparatus in accordance with one or moreembodiments of this inventive concept. Referring to these Figures, amanufacturing method of a semiconductor apparatus in accordance with oneor more embodiments of this inventive concept is described below.

Referring to FIG. 1, in step 102, provide a substrate structure. FIG. 2Ashows a schematic cross-sectional view illustrating one stage of amanufacturing method of a semiconductor apparatus in accordance with oneor more embodiments of this inventive concept, viewed from a firstdirection. FIG. 2B shows another schematic cross-sectional view of thecomponent shown in FIG. 2A, viewed from a second direction. Thecross-sectional view in FIG. 2B is obtained by observing the componentin FIG. 2A at a plane that includes line B-B′ and is perpendicular tothe paper, the second direction is the direction of the arrows in lineB-B′, as shown in FIG. 2A.

Referring to FIGS. 2A and 2B, the substrate structure comprises asubstrate 201, which may be a silicon (Si) substrate, asilicon-on-insulator (SOI) substrate, or a III-V group substrate.

The substrate structure further comprises one or multiple fins 202 onthe substrate 201 positioned along the first direction. The firstdirection is a direction along which the fins 202 extends and is alsocalled the channel direction. The fins 202 may be made of the samematerial of the substrate 201, but can also be made of a differentmaterial.

The substrate structure further comprises a separation regionsurrounding the fins 202. An upper surface of the separation region ison a substantially same horizontal level with an upper surface of thefins 202. The separation region comprises a first separation region 213neighboring a first side of the fins 202 along the first direction, anda second separation region 223 neighboring a second side of the fins 202along the second direction. The second direction may be any directionthat is perpendicular to the first direction, and is also called theperpendicular-to-channel direction. The first separation region 213 maylocate on one or both sides of the fins 202 along the first direction,the second separation region 223 may locate on one or both sides of thefins 202 along the second direction. In one embodiment, the separationregion may be made of dielectric materials such as oxide, nitride, ornitrogen oxide.

Referring to FIGS. 3A and 3B, in step 104, form a first insulation layer301 on the substrate structure, form a second insulation layer 302 onthe first insulation layer 301. Optimally, the first insulation layer301 and the second insulation layer 302 may have different etchingratios. In one embodiment, the first insulation layer 301 may be anoxide layer, such as a silicon oxide layer, the second insulation layer302 may be a nitride layer, such as a silicon nitride layer. The firstinsulation layer 301 and the second insulation layer 302 may also bemade of other materials.

Referring to FIG. 4, in step 106, form a barrier layer 401 to cover afirst portion of the second insulation layer 302 on the first separationregion 213. In one embodiment, the barrier layer 401 may further cover aportion of the second insulation layer 302 on the upper surface of thefins 202 neighboring the first separation region 213. In other words,the width of the barrier layer 401 in the first direction is greaterthan or equal to the largest width of the first separation region 213 inthe first direction. In one embodiment, the barrier layer 401 may beformed by first forming a photoresist layer on the second insulationlayer 302 and then performing a patternization process on thephotoresist. The patternization process may be a Single Diffusion Break(SDB) process.

FIG. 4 only shows the barrier layer 401 formed on the first separationregion 213 located between two fins 202. In other embodiments, thebarrier layer 401 may also be formed on the separation regionsneighboring the other side of the fins 202 along the first direction.

Referring to FIGS. 5A and 5B, in step 108, perform a first etchingprocess using the barrier layer 401 as a mask to remove a second portionof the second insulation layer 302 that is not covered by the barrierlayer 401. The first portion of the second insulation layer 302 isretained and is annotated as a remaining second insulation layer 302A.In one embodiment, the first etching process may be a wet etching or adry etching process. In one embodiment, the first etching process willstop upon reaching the first insulation layer 301.

Referring to FIG. 6, in step 110, remove the barrier layer 401 to exposethe remaining second insulation layer 302A.

Referring to FIGS. 7A and 7B, in step 112, perform a second etchingprocess using the remaining second insulation layer 302A as a mask toremove a portion of the first insulation layer 301 that is not coveredby the remaining second insulation layer 302A. The portion of the firstinsulation layer 301 underneath the remaining second insulation layer302A is retained and is annotated as a remaining first insulation layer301A. In one embodiment, the second etching process will stop uponreaching the upper surface of the fins 202 or the upper surface of theseparation regions surrounding the fins 202.

Referring to FIGS. 8A and 8B, in step 114, form a third insulation layer801A on side surfaces of the remaining first insulation layer 301A andthe remaining second insulation layer 302A. In one embodiment, aninsulation material layer 801 is first deposited on the upper surface ofthe fins 202 and the upper surface of the separation regions that arenot covered by the remaining first insulation layer 301A or theremaining second insulation layer 302A, on the side surfaces of theremaining first insulation layer 301A and the remaining secondinsulation layer 302A, and on an upper surface of the remaining secondinsulation layer 302A. Referring to FIGS. 9A and 9B, use an anisotropyetching process to remove a portion of the insulation material layer 801that is on the upper surfaces of the fins 202 and the upper surface ofthe separation regions that are not covered by the remaining firstinsulation layer 301A and the remaining second insulation layer 302A,and on the upper surface of the remaining second insulation layer 302A.A portion of the insulation material layer 801 on the side surfaces ofthe remaining first insulation layer 301A and the remaining secondinsulation layer 302A is retained and is annotated as the thirdinsulation layer 801A. Optimally, the third insulation layer 801A andthe second insulation layer 302 may be made of the same material. In oneembodiment, both the third insulation layer 801A and the secondinsulation layer 302 are a nitride layer, such as a silicon nitridelayer.

In some embodiments, the third insulation layer 801A may also be formedon the upper surface of the remaining second insulation layer 302A. Inthat case, after the insulation material layer 801 is deposited, only aportion of the insulation material layer 801 on the upper surface of theremaining second insulation layer 302A will be removed, the rest of themwill be retained on the upper surface of the remaining second insulationlayer 302A and become part of the third insulation layer 801A.

Referring to FIGS. 10A and 10B, in step 116, perform a third etchingprocess using the remaining second insulation layer 302A and the thirdinsulation layer 801A as a mask to remove a portion of the secondseparation region 223, so that an upper surface of the remaining secondseparation region 223 is lower than the upper surface of the fins 202.During the third etching process, the remaining first insulation layer301A is protected by the remaining second insulation layer 302A and thethird insulation layer 801A and is not removed. The third etchingprocess removes a portion of the separation region that is not coveredby the remaining first insulation layer 301A, including the secondseparation region and a portion of the separation region neighboring thefirst side of the fins 202 along the first direction. After the thirdetching process, the upper surface of the separation region that is notcovered by the remaining first insulation layer 301A is lower than theupper surface of the fins 202.

Referring to FIGS. 11A and 11B, in step 118, remove the remaining secondinsulation layer 302A and the third insulation layer 801A. The remainingfirst insulation layer 301A on the first separation region 213 isretained.

This concludes the description of a manufacturing method of asemiconductor apparatus in accordance with one embodiment of thisinventive concept. The first separation region 213 and the secondseparation region 223 have different heights, and the upper surface ofthe first separation region 213 is on a substantially same horizontallevel as the upper surface of the fins 202, and is covered by theremaining first insulation layer 301A. Therefore, when dummy gatestructures are formed on the first insulation layer 301 in succeedingstages, the dummy gate structures will not bridge the fins even withsome deviations of their positions. This effectively reduces theelectrical leakage and improves the reliability of the devices.Additionally, the dummy gate structures, even with some deviations ontheir positions, will not affect the contour of the epitaxially grownsemiconductor materials and therefore will not affect the induced stressin the channel, which improves the migration rate of charge carriers inthe semiconductor device. In this method, the third insulation layer801A is formed on the side surfaces of the remaining first insulationlayer 301A and the remaining second insulation layer 302A before aportion of the second separation region 223 is removed, the thirdinsulation layer 801A can protect the remaining first insulation layer301A from being damaged.

Referring to FIGS. 11A and 11B, a semiconductor apparatus made with amanufacturing method in accordance with one or more embodiments of thisinventive concept is described below.

The semiconductor apparatus comprises a substrate 201; one or multiplefins 202 positioned along a first direction on the substrate 201; and aseparation region surrounding the fins 202. The separation regioncomprises a first separation region 213 neighboring a first side of thefins 202 along the first direction, and a second separation region 223neighboring a second side of the fins 202 along a second direction thatis different from the first direction. An upper surface of the firstseparation region 213 is on a substantially same horizontal level withan upper surface of the fins 202, an upper surface of the secondseparation region 223 is lower than the upper surface of the fins 202.The semiconductor apparatus further comprises a first insulation layer301A on the first separation region 213. In one embodiment, the firstinsulation layer 301A may further cover a portion of the upper surfaceof the fins 202 neighboring the first separation region 213.

Referring to FIG. 12, in one embodiment, after the semiconductorapparatus shown in FIGS. 11A and 11B is formed, the manufacturing methodfurther comprises: forming a first gate structure 1201 on the fins 202,forming a second gate structure 1202 on the remaining first insulationlayer 301A. Usually, the second gate structure 1202 is a dummy gatestructure.

In one embodiment, the first gate structure 1201 comprises a firstdielectric layer 1211, which may be made of silicon oxide, on the fins202; a first gate 1221, which may be made of poly-crystalline silicon,on the first dielectric layer 1211; a first hard mask layer 1231, whichmay be made of silicon nitride, on the first gate 1221; and firstseparation objects 1241, which may be made of silicon oxide or siliconnitride, formed on side surfaces of the first dielectric layer 1211, thefirst gate 1221, and the first hard mask layer 1231.

In one embodiment, the second gate structure 1202 comprises a seconddielectric layer 1212, which may be made of silicon oxide, on theremaining first insulation layer 301A; a second gate 1222, which may bemade of poly-crystalline silicon, on the second dielectric layer 1212; asecond hard mask layer 1232, which may be made of silicon nitride, onthe second gate 1222; and second separation object 1242, which may bemade of silicon oxide or silicon nitride, formed on side surfaces of thesecond dielectric layer 1212, the second gate 1222, and the second hardmask layer 1232. The second separation objects 1242 covers a portion ofthe upper surface of the fins 202 neighboring the first separationregion 213 that is underneath the second gate structure 1202.

In one embodiment, after the first gate structure 1201 and the secondgate structure 1202 are formed, the manufacturing method furthercomprises the following steps.

Referring to FIG. 13, etch the fins 202 on two sides of the first gatestructure 1201 using the first gate structure 1201 and the second gatestructure 1202 as masks to form dents such as the first dent 1321 andthe second dent 1322. Referring to FIG. 14, epitaxially growsemiconductor materials in the first dent 1321 and the second dent 1322to form a source region 1401 and a drain region 1402, respectively. Inone embodiment, the semiconductor materials in the first dent 1321 andthe second dent 1322 may be silicon-germanium (SiGe), silicon carbide(SiC), or silicon. When silicon is used as the semiconductor material inthe first dent 1321 and the second dent 1322, Phosphorus can be in-situdoped.

Referring to FIG. 14, this inventive concept also presents anothersemiconductor apparatus. Comparing with the semiconductor apparatusshown in FIGS. 11A and 11B, the semiconductor apparatus shown in FIG. 14further comprises a first gate structure 1201 on the fins 202, and asecond gate structure 1202 on the remaining first insulation layer 301A.Additionally, this semiconductor apparatus further comprises a sourceregion 1401 and a drain region 1402, which are formed by epitaxiallygrowing semiconductor materials on two sides of the first gate structure1201. In one embodiment, the first gate structure 1201 and the secondgate structure 1202 may have the same structures as those disclosed inthe manufacturing method described above, which are not repeated here inthe interest of conciseness.

In this semiconductor apparatus, an upper surface of the firstseparation region is on a substantially same horizontal level with theupper surface of the fins, and the first insulation layer is formed onthe first separation region. Therefore, when dummy gate structures, suchas the second gate structure as shown in FIG. 14, are formed on thefirst insulation layer, these gate structures will not connect with thefins even if there are some deviations on their positions. Thiseffectively reduces the electrical leakage and improves the reliabilityof the devices. Additionally, the dummy gate structures, even with somedeviations on their positions, will not affect the contour of theepitaxially grown semiconductor materials and therefore will not affectthe induced stress in the channel, which improves the migration rate ofcharge carriers in the semiconductor device.

Referring to FIGS. 15A, 15B, 16A, 16B, 17A, 17B, 18A, 18B, 19A, and 19B,this inventive concept further presents an embodiment of a manufacturingmethod for the substrate structure described above.

Referring to FIGS. 15A and 15B, provide an initial substrate 1501, forma hard mask layer 1502 on the initial substrate 1501. The hard masklayer 1502 may be formed by self-aligned double patterning (SADP)technique and may be made of silicon nitride. In one embodiment, theinitial substrate 1501 comprises an initial semiconductor layer 1511 andan initial oxide layer 1521 on the initial semiconductor layer 1501. Theinitial oxide layer 1521 may work as a buffer layer to reduce the stressbetween the initial substrate 1501 and the hard mask layer 1502.

Referring to FIGS. 16A and 16B, etch the initial substrate 1501 usingthe hard mask layer 1502 as a mask to form the substrate 201 and one ormultiple fins 202 on the substrate 201. In one embodiment, the initialsubstrate 1501 comprises the initial semiconductor layer 1511 and theinitial oxide layer 1521 on the initial semiconductor layer 1501.Therefore the fins 202 also comprises a semiconductor layer 212 and anoxide layer 222 on the semiconductor layer 212.

Referring to FIGS. 17A and 17B, separation material 1701 is depositedaround the fins 202 to fill the area surrounding the fins 202. An uppersurface of the separation material 1701 is on a substantially samehorizontal level with an upper surface of the hard mask layer 1502. Asan example, the separation material 1701 may be deposited by FlowableChemical Vapor Deposition (FCVD) followed by a planarization processsuch as Chemical-Machanical Polishing (CMP), so that the upper surfaceof the separation material 1701 is on a substantially same horizontallevel with the upper surface of the hard mask layer 1502. Additionally,in another embodiment, before the separation material 1701 is deposited,a liner layer may be formed on the structure shown in FIG. 16A, theliner layer may be a silicon oxide layer and may be formed by an In-SituSteam Generation (ISSG) process. The liner layer may fix defects thatmay exist on fins' surfaces.

Referring to FIGS. 18A and 18B, etch back the separation layer 1701 toexpose the hard mask layer 1502.

Referring to FIGS. 19A and 19B, remove the hard mask layer 1502 to formthe substrate structure.

Compared with the substrate structure shown in FIGS. 2A and 2B, thesubstrate structure shown in FIGS. 19A and 19B has an additional oxidelayer 222. The oxide layer 222 is optional.

After the substrate structure is formed, the steps shown in FIG. 1 maybe performed on the substrate structure according to the descriptionabove.

The semiconductor apparatus and its manufacturing method in accordancewith one or more embodiments of this inventive concept has beenpresented. While this inventive concept has been described in terms ofseveral embodiments, there are alterations, permutations, andequivalents, which fall within the scope of this disclosure. It shallalso be noted that there are alternative ways of implementing themethods and apparatuses of the inventive concept. Furthermore,embodiments may find utility in other applications. The abstract sectionis provided herein for convenience and, due to word count limitation, isaccordingly written for reading convenience and shall not be employed tolimit the scope of the claims. It is therefore intended that the claimsbe interpreted as including all such alterations, permutations, andequivalents.

What is claimed is:
 1. A method for manufacturing a semiconductorapparatus, comprising: providing a substrate structure, wherein thesubstrate structure comprises: a substrate; one or multiple finspositioned along a first direction on the substrate; and a separationregion surrounding the fins, wherein an upper surface of the separationregion is on a substantially same horizontal level as an upper surfaceof the fins, the separation region comprises a first separation regionneighboring a first side of the fins along the first direction, and asecond separation region neighboring a second side of the fins along asecond direction that is different from the first direction; forming afirst insulation layer on the substrate structure; forming a secondinsulation layer on the first insulation layer; forming a barrier layeron a first portion of the second insulation layer on the firstseparating region; performing a first etching process using the barrierlayer as a mask to remove a second portion of the second insulationlayer that is not covered by the barrier layer; removing the barrierlayer; performing a second etching process using the remaining secondinsulation layer as a mask to remove a portion of the first insulationlayer that is not covered by the remaining second insulation layer;forming a third insulation layer on side surfaces of the remaining firstinsulation layer and the remaining second insulation layer; performing athird etching process using the remaining second insulation layer andthe third insulation layer as a mask to remove a portion of the secondseparation region that is not covered by the remaining second insulationlayer or the third insulation layer; and removing the remaining secondinsulation layer and the third insulation layer.
 2. The method of claim1, wherein the barrier layer further covers a portion of the secondinsulation layer on the upper surface of the fins neighboring the firstseparation region.
 3. The method of claim 1, wherein forming a thirdinsulation layer on side surfaces of the remaining first insulationlayer and the remaining second insulation layer comprises: forming aninsulation material layer to cover a surface that is not covered byeither the remaining first insulation layer or the remaining secondinsulation layer, side surfaces of the remaining first insulation layerand the remaining second insulation layer, and an upper surface of theremaining second insulation layer; and removing a portion of theinsulation material layer on the surface that is not covered by theremaining first insulation layer and the remaining second insulationlayer, and on the upper surface of the remaining second insulationlayer, the remaining insulation material layer is the third insulationlayer.
 4. The method of claim 1, wherein the first insulation layer andthe second insulation layer have different etching ratios.
 5. The methodof claim 1, wherein the first insulation layer is an oxide layer, thesecond insulation layer is a nitride layer, and the third insulationlayer is a nitride layer.
 6. The method of claim 1, wherein providing asubstrate structure comprises: providing an initial substrate; forming apatterned hard mask layer on the initial substrate; etching the initialsubstrate using the hard mask layer as a mask to form the substrate andone or multiple fins on the substrate; depositing separation material tofill areas surrounding the fins, wherein an upper surface of theseparation material is on a substantially same horizontal level with anupper surface of the hard mask layer; etching back the separationmaterial to expose the hard mask layer; and removing the hard mask layerto form the substrate structure.
 7. The method of claim 6, wherein theinitial substrate comprises an initial semiconductor layer and aninitial oxide layer on the initial semiconductor layer, the finscomprises a semiconductor layer and an oxide layer on the semiconductorlayer.
 8. The method of claim 1, further comprising: forming a firstgate structure on the fins; and forming a second gate structure on theremaining first insulation layer.
 9. The method of claim 8, furthercomprising: etching the fins on two sides of the first gate structureusing the first gate structure and the second gate structure as masks toform dents; and epitaxially growing semiconductor materials in the dentsto form a source region and a drain region.
 10. The method of claim 9,wherein the semiconductor materials comprise silicon-germanium (SiGe) orsilicon carbide (SiC).
 11. The method of claim 8, wherein the first gatestructure comprises: a first dielectric layer on the fins; a first gateon the first dielectric layer; a first hard mask layer on the firstgate; and first separation objects on side surfaces of the firstdielectric layer, the first gate, and the first hard mask layer, whereinthe second gate structure comprises: a second dielectric layer on theremaining first insulation layer; a second gate on the second dielectriclayer; a second hard mask layer on the second gate; and secondseparation objects on side surfaces of the second dielectric layer, thesecond gate, and the second hard mask layer, wherein the secondseparation objects cover a portion of the upper surface of the fins nextto the first separation region that is underneath the second gatestructure.
 12. The method of claim 11, wherein the first dielectriclayer and the second dielectric layer are made of silicon oxide, thefirst gate and the second gate are made of poly-crystalline silicon, andthe first hard mask layer and the second hard mask layer are made ofsilicon nitride.
 13. A semiconductor apparatus, comprising: a substrate;one or multiple fins positioned along a first direction on thesubstrate; a separation region surrounding the fins, wherein theseparation region comprises a first separation region neighboring afirst side of the fins along the first direction, and a secondseparation region neighboring a second side of the fins along a seconddirection that is different from the first direction, wherein an uppersurface of the first separation region is on a substantially samehorizontal level with an upper surface of the fins, and wherein an uppersurface of the second separation region is lower than the upper surfaceof the fins; and a first insulation layer on the first separationregion.
 14. The apparatus of claim 13, wherein the first insulationlayer further covers a portion of the upper surfaces of the fins next tothe first separation region.
 15. The apparatus of claim 13, furthercomprising: a first gate structure on the fins; and a second gatestructure on the first insulation layer.
 16. The apparatus of claim 15,further comprising: a source region next to a first side of the firstgate structure formed by epitaxially growing a semiconductor material;and a drain region next to a second side of the first gate structureformed by epitaxially growing the semiconductor material.
 17. Theapparatus of claim 16, wherein the semiconductor material comprisessilicon-germanium (SiGe) or silicon carbide (SiC).
 18. The apparatus ofclaim 15, wherein the first gate structure comprises: a first dielectriclayer on the fins; a first gate on the first dielectric layer; a firsthard mask layer on the first gate; and first separation objects on sidesurfaces of the first dielectric layer, the first gate, and the firsthard mask layer, wherein the second gate structure comprises: a seconddielectric layer on the remaining first insulation layer; a second gateon the second dielectric layer; a second hard mask layer on the secondgate; and second separation objects on side surfaces of the seconddielectric layer, the second gate, and the second hard mask layer,wherein the second separation objects cover a portion of the uppersurface of the fins next to the first separation region that isunderneath the second gate structure.
 19. The apparatus of claim 16,wherein the first dielectric layer and the second dielectric layer aremade of silicon oxide, the first gate and the second gate are made ofpoly-crystalline silicon, and the first hard mask layer and the secondhard mask layer are made of silicon nitride.